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Title and position: Postdoctoral

Research direction: device preparation and characterization based on two-dimensional semiconductor materials

Contact information:yinlei2018@outlook.com



Personal profile

Yin Lei, postdoctoral fellow

The main research direction is the preparation and characterization of devices based on two-dimensional semiconductor materials, including: 1) physical properties of low-dimensional semiconductor materials, 2) new van der Waals heterojunction functional devices, and 3) non-volatile memory based on two-dimensional materials.


Educational experience

2010 ~ 2014: Xihua University, Applied Physics, Bachelor

2014 ~ 2017: University of Chinese Academy of Sciences, Materials Engineering, Master

2017 ~ 2020: University of Chinese Academy of Sciences, Condensed Matter Physics, PhD

2020 ~: Postdoctoral Fellow, School of Physics and Technology, Wuhan University


Honors and awards

Special Award of the President of the Chinese Academy of Sciences 2020

National Scholarship 2016 & 2011

National Nanoscience Center Director Outstanding Scholarship 2019

"Three Good Student Models" of the University of Chinese Academy of Sciences in 2020

Outstanding Graduates of Sichuan Province 2014


Research results

1. Lei Yin#, Peng He#, Ruiqing Cheng#, Feng Wang, Fengmei Wang, Zhenxing Wang, Yao Wen & Jun He*, Robust trap effect in transition metal dichalcogenides for advanced multifunctional devices, Nat. Commun. 2019, 10, 4133.


2. Lei Yin, Ruiqing Cheng, Zhenxing Wang, Feng Wang, Marshet Getaye Sendeku, Yao Wen, Xueying Zhan & Jun He*, Two-Dimensional Unipolar Memristors with Logic and Memory Functions, Nano Lett. 20, 4144−4152.


3. Lei Yin#, Feng Wang#, Ruiqing Cheng, Zhenxing Wang, Junwei Chu, Yao Wen & Jun He*, Van der Waals Heterostructure Devices with Dynamically Controlled Conduction Polarity and Multifunctionality, Adv. Funct. Mater. 2019, 29, 1804897.


4. Ruiqing Cheng#, Lei Yin#, Feng Wang, Zhenxing Wang, Junjun Wang, Yao Wen, Wenhao Huang, Marshet Getaye Sendeku, Liping Feng*, Yufang Liu* & Jun He*, Anti-Ambipolar Transport with Large Electrical Modulation in 2D Heterostructured Devices, Adv. Mater. 2019, 31, 1901144.


5. Wenhao Huang#, Lei Yin#, Feng Wang, Ruiqing Cheng, Zhenxing Wang, Marshet Getaye Sendeku, Junjun Wang, Ningning Li, Yuyu Yao, Xiaoguang Yang, Chongxin Shan, Tao Yang & Jun He*, Multibit Optoelectronic Memory in Top-Floating-Gated van der Waals Heterostructures, Adv. Funct. Mater. 2019, 29, 1902890.


6. Yao Wen#, Lei Yin#, Peng He, Zhenxing Wang, Xiankun Zhang, Qisheng Wang, Tofik Ahmed Shifa, Kai Xu, Fengmei Wang, Xueying Zhan, Feng Wang, Chao Jiang & Jun He*, Integrated high-performance infrared phototransistor arrays composed of nonlayered PbS-MoS2 heterostructures with edge contacts, Nano Lett. 2016, 16, 6437-6444.


7. Pengfei Liu#, Lei Yin#, Liping Feng*, Yu Sun, Hanqing Sun, Wenqi Xiong, Congxin Xia, Zhenxing Wang* & Zhengtang Liu, Controllable preparation of ultrathin 2D BiOBr crystals for high-performance ultraviolet photodetector, Sci. China-Mater. 2020, DOI: 10.1007/s40843-020-1382-9.


8. Lei Yin, Zhenxing Wang, Feng Wang, Kai Xu, Ruiqing Cheng, Yao Wen, Jie Li & Jun He*, Ferroelectric-Induced Carrier Modulation for Ambipolar Transition Metal Dichalcogenide Transistors, Appl. Phys. Lett. 2017, 110, 123106.


9. Lei Yin, Kai Xu, Yao Wen, Zhenxing Wang, Yun Huang, Feng Wang, Tofik Ahmed Shifa, Ruiqing Cheng, He Ma & Jun He*, Ultrafast and Ultrasensitive Phototransistors Based on Few-Layered HfSe2, Appl. Phys. Lett. 2016, 109, 213105.


10. Lei Yin#, Xueying Zhan#, Kai Xu, Feng Wang, Zhenxing Wang*, Yun Huang, Qisheng Wang, Chao Jiang & Jun He*, Ultrahigh Sensitive MoTe2 Phototransistors Driven by Carrier Tunneling, Appl. Phys. Lett. 2016, 108, 043503.


11. Kai Xu#, Lei Yin#, Yun Huang, Tofik Ahmed Shifa, Junwei Chu, Feng Wang, Ruiqing Cheng, Zhenxing Wang & Jun He*, Synthesis, Properties and Applications of 2D Layered MIIIXVI (M = Ga, In; X = S, Se, Te) Materials, Nanoscale 2016, 8, 16802-16818.