PhD

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Research direction: Preparation of low-dimensional materials and device applications

Contact information:

Email: j.jiang@whu.edu.cn; j.jiang@m.scnu.edu.cn.


Personal profile

Jiang Jian, a 2020 PhD student.

Born in Chizhou City, Anhui Province in September 1994, graduated with a master's degree from the Institute of Semiconductor Science and Technology of South China Normal University in July 2019. In August of the same year, he joined Ziguang Tongchuang Electronics Co., Ltd. under the Ziguang Group to engage in FPGA chip research and development. Passed in 2020 Application-assessment system entered the research group of Professor He Jun of the School of Physics and Technology of Wuhan University to study for a doctorate degree in full-time, majoring in microelectronics and solid-state electronics. 


research experience

2020.09~now Wuhan University Ph.D Candidate (Microelectronics and Solid State Electronics)


Main awards, academic papers and patents.

1. Main awards:

In 2019, he won the "Zeng Yongyu" scholarship from South China Normal University;

In 2019, he won the "Top Ten Academic Paper Award" for graduate students of South China Normal University;

In 2019, he was awarded the honorary title of "Top 100 Excellent Graduates" of South China Normal University;

In 2019, he won the excellent master's thesis of South China Normal University


2. SCI papers:

(1). Direct lift-off and the piezo-phototronic study of InGaN/GaN heterostructure membrane. 2019, Nano Energy, 59, 545-552. (First author)

(2). Epitaxtial lift-off for freestanding InGaN/GaN membranes and vertical blue light-emitting-diodes. 2020, Journal of Materials Chemistry C, Doi: 10.1039/d0tc01986k. (First author)

(3). Self-powered, Superior High Gain Silicon-based Near-Infrared Photosensing for Low-Power Light Communication 2020, Nano Energy, 70, 104544. (Mainly involved)

(4). Recent advances on two-dimensional materials for photodetectors, 2021, Advanced Electronic Materials, 2001125. (First author; Review)


3. Patent:

(1) "A single crystal GaN nanowire and its preparation method" Patent number: ZL201910212776.2 (authorized)

(2) "A method of modulating the internal polarization of InGaN/GaN heterojunction film" (under review)

(3) The third author of "A Method and Device for Epitaxial Film Wafer Level Stripping" (under review)


motto

1. There is no overnight success, only perseverance and struggle.

2. Confident that in a two-hundred-year life, you will be hit by water for three thousand miles.