1.Speeding protons with metal vacancies

Fengmei Wang*, Jun He*

Science 2020, 370, 525-526. 【PDF】

2. Two-Dimensional Unipolar Memristors with Logic and Memory Functions

Lei Yin, Ruiqing Cheng, Zhenxing Wang,* Feng Wang, Marshet Getaye Sendeku, Yao Wen, Xueying Zhan, and Jun He*

Nano Letters 2020, 20, 4144−4152 【PDF】 

3. Tunable Room-temperature Ferromagnetism in two-dimensional Cr₂Te₃

Yao Wen, Zhehong Liu, Yu Zhang, Congxin Xia, Baoxing Zhai, Xinhui Zhang, Guihao Zhai, Chao Shen, Peng He, Ruiqing Cheng, Lei Yin, Yuyu Yao, Marshet Getaye Sendeku, Zhenxing Wang, Xubing Ye, Chuansheng Liu, Chao Jiang, Chongxin Shan, Youwen Long,* and Jun He*  

Nano Letters 2020, 20, 5, 3130–3139 【PDF】 

4. Bridging the van der Waals Interface for Advanced Optoelectronic Devices

Yao Wen, Peng He, Yuyu Yao, Yu Zhang, Ruiqing Cheng, Lei Yin, Ningning Li, Jie Li, Junjun Wang, Zhenxing Wang, Chuansheng Liu, Xuan Fang, Chao Jiang, Zhipeng Wei,* and Jun He*

Advanced Materials 2020, 32, 1906874 【PDF】

5. Gate-Coupling-Enabled Robust Hysteresis for Nonvolatile Memory and Programmable Rectifier in Van der Waals Ferroelectric Heterojunctions

Wenhao Huang, Feng Wang, Lei Yin, Ruiqing Cheng, Zhenxing Wang,  Marshet Getaye Sendeku, Junjun Wang, Ningning Li, Yuyu Yao, and Jun He*

Advanced Materials 2020, 32, 1908040 【PDF】

6. Subthermionic field-effect transistors with sub-5 nm gate lengths based on van der Waals ferroelectric heterostructures

Feng Wang, Jia Liu, Wenhao Huang, Ruiqing Cheng, Lei Yin, Junjun Wang, Marshet Getaye Sendeku, Yu Zhang, Xueying Zhan, Chongxin Shan, Zhenxing Wang*, Jun He*

Science Bulletin 2020, 65, 1444-1450. 【PDF】