[01] Effect of In0.2Ga0.8As and In0.2Al0.8 As combination layer on band offsets of InAs quantum dots

J. He*, B. Xu and Z. G. Wang

Applied Physics Letters. 84, 5237 (2004) 【PDF】 DOI: 10.1063/1.1763975  

[02] Formation of columnar (In,Ga)As quantum dots

J. He*, R. Nitzel, P. Offermans, P. M. Koenraad, Q. Gong, G. J. Hamhuis, T. J. Eijkemans and J. H. Wolter

Applied Physics Letters. 85, 2771 (2004) 【PDF】 DOI: 10.1063/1.1801172  

[03] Growth, structural and optical properties of self-assembled (In,Ga)As quantum posts on GaAs

J. He ,H. J. Krenner ,C. Pryor ,J. P. Zhang ,Y. Wu ,D. G. Allen ,C. M. Morris ,M. S. Sherwin and P. M. Petroff*

Nano Letters. 7, 802-806 (2007) 【PDF】 DOI: 10.1021/nl070132r  

[04] A semiconductor exciton memory cell based on a single quantum nanostructure

Hubert J. Krenner*, Craig E. Pryor,Jun He and Pierre M. Petroff

Nano Letters. 8, 1750-1755 (2008) 【PDF】 DOI: 10.1021/nl800911n  

[05] InAs/GaAs nanostructures grown in patterned nanoholes on Si (001) by molecular beam epitaxy

Jun He*, Kameshwar Yadavalli, Zuoming Zhao, Ning Li, Zhibiao Hao, Kang L Wang and Ajey P Jacob

Nanotechnology. 19, 455607 (2008) 【PDF】 DOI: 10.1088/0957-4484/19/45/455607  

[06] Structure and composition profile of InAs/GaAs quantum dots capped by InAlAs and InGaAs

combination capping layer

Jun He*, Yuan Wu and Kang L Wang

Nanotechnology. 21, 255705 (2010) 【PDF】 DOI: 10.1088/0957-4484/21/25/255705  

[07] Band alignment tailoring of InAs1-xSbx/GaAs quantum dots: Control of type I to type II transition

J. He*, C. J. Reyner, B. L. Liang, K. Nunna and D. L. Huffaker*

Nano Letters. 10, 3052-3056 (2010) 【PDF】 DOI: 10.1021/nl102237n  

[08] Enhanced photoelectric catalytic degradation of methylene blue via TiO2 nanotube arrays hybridized with

graphite-like carbon

Yajun Wang, Jie Lin, Ruilong Zong, Jun He and Yongfa Zhu*

Journal of Molecular Catalysis A-Chemical. 349, 13-19 (2011) 【PDF】DOI: 10.1016/j.molcata.2011.08.020