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Introduction

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He Jun, professor/doctoral supervisor, winner of the National Outstanding Youth Fund, young and middle-aged science and technology leader of the Ministry of Science and Technology, candidate of the "Ten Thousand Talents Program" of the Central Organization Department, chief scientist of the National Key Research and Development Program


Contact: He-jun@whu.edu.cn


Research areas:


We are committed to the research on the controllable equipment and device applications of new low-dimensional semiconductors, aiming to realize the electronic and optoelectronic device applications of high-performance semiconductors through material structure design, growth control, performance regulation and device optimization. The main research directions include:

1) Controllable preparation and physical property adjustment of new low-dimensional semiconductor nanomaterials;

2) Design and manufacture of electronic devices based on new principles and new structures of new low-dimensional semiconductor materials;

3) Research on next-generation electronic and optoelectronic devices and their silicon-based integration based on new two-dimensional semiconductor materials and their heterojunctions;

4) Research on the physical properties of new magnetic materials and the preparation of low-power spintronic devices.

Research Introduction:

New electronic device technology featuring new materials, new structures and new principles is the main driving force for the next generation of transformative device technology. This research group is committed to the design and property control of new low-dimensional electronic materials, develops new device construction technology, and provides a new way for the development of integrated circuits. already at

Science, Nature Electronics，Nature Communications，Science Advances, Chemic Society Review，Nano Letters, Advance Materials，Angewandte Chemie International Edition，ACS NanoHe has published nearly 200 SCI research papers and 82 corresponding author papers with an impact factor greater than 10 (as of September 2021) in internationally renowned journals, and he has cited more than 9,000 times. More than 30 Chinese patents have been applied for, and 12 have been authorized. In 2016, he won the Beijing Science and Technology Award.

He is currently the associate editor of Science Bulletin, the associate editor of Materials Today Chemistry under Elsevier, the editor of FlatChem under Elsevier, the editor of npj 2D materials and applications under Nature, and the editor of Nanotechnology and Nano Futures under IOP of the British Physical Society.

Selected Publications:

  1. Fengmei Wang*, Jun He*,Speeding protons with metal vacancies, Science 370, 525-526 (2020).

  2. Lei Yin, Peng He, Ruiqing Cheng, Feng Wang, Fengmei Wang, Zhenxing Wang, Yao Wen and Jun He*，Robust trap effect in transition metal dichalcogenides for advanced multifunctional devices，Nature Commun. 10, 4133 (2019)

  3. R. Q. Cheng, F. Wang, L. Yin, Z. X. Wang, Y. Wen, T. Shifa and J. He*, High-performance, multifunctional devices based on asymmetric van der Waals heterostructures, Nature Electron. 1, 356 (2018)

  4. Q. S Wang ，Y. Wen.  K. M. Cai, R. Q. Cheng, L. Yin, Y. Zhang, J. Li, Z. X. Wang, F. Wang, F. M. Wang, T. A. Shifa, C. Jiang*, H. Lee*, and J. He*, Nonvolatile infrared memory in MoS2/ PbS van der Waals heterostructure, Sci. Adv. 4, eaap7916 (2018)

  5. F. Wang, Z. X. Wang, L. Yin, R. Q. Cheng, J. Wang, Y. Wen, T. Shifa, F. M. Wang, Y. Zhang, X. Y. Zhan, and J. He*, 2D Library beyond Graphene and Transition Metal Dichalcogenides: A Focus on Photodetection, Chem. Soc. Rev. 47, 6296 (2018)

  6. Ruiqing Cheng, Lei Yin, Rui Hu, Huijun Liu, Yao Wen, Chuansheng Liu, and Jun He*, Modulation of Negative Differential Resistance in Black Phosphorus Transistors, Adv. Mater. 33, 2008329（2021）

  7. Lei Yin, Ruiqing Cheng, Yao Wen, Chuansheng Liu, and Jun He*, Emerging Two-dimensional Memory Devices for In-memory Computing, Adv. Mater. 33, 2007081（2021）

  8. Baoxing Zhai, Ruiqing Cheng, Wen Yao, Lei Yin, Chenhai Shen, Congxin Xia, Jun He*, Using ferroelectric polarization to regulate and preserve the valley polarization in a HfN2/CrI3/In2Se3 heterotrilayer, Phys. Rev. B 103, 214114（2021）

  9. Lei Yin, Ruiqing Cheng, Zhenxing Wang* ，Feng Wang, Marshet Getaye Sendeku, Yao Wen, Xueying Zhan, and Jun He*，Two-Dimensional Unipolar Memristors with Logic and Memory Functions， Nano Lett. 20, 4144（2020）

  10. Yao Wen, Zhehong Liu, Yu Zhang, Congxin Xia, Baoxing Zhai, Xinhui Zhang, Guihao Zhai, Chao Shen, Peng He, Ruiqing Cheng, Lei Yin, Yuyu Yao, Marshet Getaye Sendeku, Zhenxing Wang, Xubing Ye, Chuansheng Liu, Chao Jiang, Chongxin Shan, Youwen Long* and Jun He* ，Tunable Room-temperature Ferromagnetism in two-dimensional Cr2Te3， Nano Lett. 20, 5, 3130（2020）

  11. Yao Wen, Peng He, Yuyu Yao, Yu Zhang, Ruiqing Cheng, Lei Yin, Ningning Li, Jie Li, Junjun Wang, Zhenxing Wang, Chuansheng Liu, Xuan Fang, Chao Jiang, Zhipeng Wei* and Jun He*，Bridging the van der Waals Interface for Advanced Optoelectronic Devices，Adv. Mater. 32, 1906874 （2020）

  12. Wenhao Huang, Feng Wang, Lei Yin, Ruiqing Cheng, Zhenxing Wang,  Marshet Getaye Sendeku, Junjun Wang, Ningning Li, Yuyu Yao, and Jun He*，Gate-Coupling-Enabled Robust Hysteresis for Nonvolatile Memory and Programmable Rectifier in Van der Waals Ferroelectric Heterojunctions，Adv. Mater. 32, 1908040（2020）

  13. Yao Wen, Peng He, Qisheng Wang, Yuyu Yao, Yu Zhang, Sabir Hussain, Zhenxing Wang, Ruiqing Cheng, Lei Yin, Marshet Getaye Sendeku, Feng Wang, Chao Jiang, and Jun He* ，Gapless van der Waals Heterostructures for Infrared Optoelectronic Devices，ACS Nano 13, 14519−14528 （2019）

  14. Yu zhang, Yuyu Yao, Marshet Getaye Sendeku, Lei Yin, Xueying Zhan, Feng Wang, Zhenxing Wang,Jun He*，Recent Progresses in CVD Growth of 2D Transition Metal Dichacogenides and Related Heterostructures，Adv. Mater. 31, 1901694. （2019）

  15. Junwei Chu, Yu Zhang, Yao Wen, Ruixi Qiao, Chunchun Wu, Peng He, Lei Yin, Ruiqing Cheng, Feng Wang,Zhenxing Wang, Jie Xiong*, Yanrong Li, Jun He*，Sub-millimeter Scale Growth of One-unit-cell Thick Ferrimagnetic Cr2S3 Nanosheets，Nano Lett. 19, 2154-2161. (2019)

  16. Ningning Li, Yu Zhang, Ruiqing Cheng, Junjun Wang, Jie Li, Zhenxing Wang, Marshet Getaye Sendeku, Wenhao Huang, Yuyu Yao, Yao Wen, and Jun He* ，Synthesis and Optoelectronic Applications of a Stable p-Type 2D Material: α-MnS，ACS Nano 13, 11, 12662–12670. (2019)

  17. Yu Zhang, Junwei Chu, Lei Yin, Tofik Ahmed Shifa, Zhongzhou Cheng, Ruiqing Cheng, Feng Wang,  Yao Wen, Xueying Zhan, Zhenxing Wang, Jun He* ，Ultrathin magnetic 2D single-crystal CrSe, Adv. Mater.31, 1900056 (2019)

  18. Feng Wang, Bin Tu, Peng He, Zhenxing Wang, Lei Yin, Ruiqing Cheng, Junjun Wang, Qiaojun Fang, Jun He*，Uncovering the Conduction Behaviour of van der Waals Ambipolar Semiconductors，Adv. Mater. 31, 1805317  (2019)

  19. Y. Zhang, L. Yin, J. Chu, T. Shifa, J. Xia, F. Wang, Y. Wen, X. Zhan, Z. Wang* and J. He*, Edge-epitaxial growth of two-dimensional NbS2-WS2 lateral metal-semiconductor heterostructures，Adv. Mater. 30, 1803665 (2018)

  20. T. Shifa, F. M. Wang, Y. Liu and J. He*, Heterostructures based on two dimensional materials: A versatile platform for efficient catalysis，Adv. Mater. 1804828 (2018)

Host or participate in scientific research projects


1. National Natural Science Foundation of China, major research plan and key support project, 91964203, integration of two-dimensional layered materials and heterogeneous devices, 2021/01-2023/12, 3 million yuan, project leader;

2. National Key Research and Development Program of the Ministry of Science and Technology, 2018YFA0703700, Epitaxial growth of wafer-level two-dimensional electronic materials, heterostructure construction and electronic devices, 2019-2024, 21.71 million, project leader;

3. National Natural Science Foundation of China Emergency Management Project, 61851403, silicon-based integration of new two-dimensional semiconductor materials and optoelectronic devices, 2019/01-2021/12, 3 million yuan, project leader;

4. The "Ten Thousand Talents Program" young and middle-aged scientific and technological innovation leader of the Central Organization Department, 2018/01-2021/12,800,000 yuan, project leader;

5. Chinese Academy of Sciences Strategic Leadership Category B Cultivation Project, 2018/01-2020/12,300,000 yuan, completed, participate;

6. JWKJW innovation project, XXXX project, 2018/11-2021/11, 1.5 million yuan, project leader;

7. National Science Fund for Distinguished Young Scholars, 61625401, new two-dimensional chalcogenide semiconductors and electronic and optoelectronic devices, 2017/01-2021/123.5 million, project leader;

8. National Key R&D Program of the Ministry of Science and Technology, 2016YFA0200700, Cross-scale characterization and measurement of physical and chemical properties in photoelectric conversion systems, 2017/01-2021/12, 22 million yuan, participation;

9. National Natural Science Foundation of China, 61574050, Controllable growth of two-dimensional topological crystalline insulators and surface state transport regulation, 2016/01-2019/12, 808,000 yuan, completed, project leader;

10. Equipment research and development project of Chinese Academy of Sciences, YZ201517, Chalcogenide two-dimensional layered semiconductor material van der Waals epitaxial growth equipment (E-vdWED), 2.84 million yuan, completed, project leader;

11. National Natural Science Foundation of China, 21373065,: (In,Ga)2Te3 one-dimensional nanostructure and the controllable preparation and photoelectric properties of core-shell composite materials, 2014/01-2017/12, 810,000 yuan, The question has been completed, the person in charge of the project;

12. "One Three Five" Center of Excellence Cultivation Project, 2014/1-2015/12, 500,000 yuan, completed the topic, participate;

13. A pilot project of the Chinese Academy of Sciences, XDA09040201, 2013/01-2018/83.1 million yuan, completed and participated;

14. The key deployment project of the Chinese Academy of Sciences, the growth of III-VA semiconductors on patterned silicon substrates, 2013/01-2017/12, 1 million yuan, completed, project leader;

15. The Chinese Academy of Sciences has introduced outstanding overseas talents, 2.7 million, has been completed, the project leader;


Address: School of Physics Science and Technology, Wuhan University, Wuchang District, Wuhan City, Hubei Province　 Email: He-jun@whu.edu.cn

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